【摘要】 用卤素 -钨灯作辐射热源快速热氮化 (RTN) ,在〈10 0〉和〈111〉晶向Si衬底上制备了Si_SiOxNy_Al电容 ,并测量了由低场到F_N隧穿电场范围的电子从N型Si积累层到超薄SiOxNy 膜的电流传输特性 .测量结果说明 ,两种不同晶向的低场漏电流没有多大区别 ,而在高场范围对〈10 0〉晶向电容结构的F_N隧穿电流要比〈111〉晶向电容结构的F_N隧穿电流显著增加 ,并对实验结果作了初步讨论更多还原

【Abstract】 The Si_SiO x N y _Al capacitors have been fabricated on both 〈100〉 and 〈111〉oriented Si substrates by the tungsten_halogen lamps thermal RTN. The electron current transporting from the n_type Si accumulation layer into the SiO x N y ultrathin films has been measured in both the lower electric field region and the F_N region. It is shown that in the lower field region the leakage current has no difference between both crystal orientations. In the higher field region, however, the F_N tunneling current is increased more markedly in 〈100〉 oriented capacitor than in 〈111〉 oriented capacitor. The results have been discussed preliminarily in this paper.更多还原