【摘要】 采用非活性金属中间层FeNi/Cu在高、低真空条件下进行了Si3 N4 陶瓷与Ni的扩散连接 ,然后对部分接头进行了热等静压 (HIP)后处理 ,测定了连接接头的四点弯曲强度 ,用扫描电镜 (SEM)、电子探针 (EPMA)和X射线衍射仪 (XRD)对连接界面区域进行了分析。结果表明 ,采用非活性金属中间层扩散连接Si3 N4 陶瓷与Ni,在高真空和低真空条件下均能获得高强度连接 ,连接界面处没有形成Ni-Si化合物反应层 ,连接时间对接头强度的影响不明显。上述特征与用活性金属中间层连接时的情况截然不同。本文的连接方法有着重要的工程应用前景。更多还原

【Abstract】 Diffusion bonding of Si 3 N 4 to Ni was carried out using non active metal interlayers of FeNi/Cu under high and low vacuum conditions.After bonding,HIP processes were also used for some joints.Joint strength was determined by four-point bending tests.The joint interfaes were analyzed by mines of SEM,EPMA and XRD.The results shown that high joint strength could be obtained even under low vacuum bonding condition.The reaction layer of Ni-Si system compound was not formed at the interface between ceramic and the metal.Bonding time did not have visible effect on the joint strength.These characters are quite different from those when active metal is employed as interlayer in diffusion bonding.The method suggested in this paper has important foreground for engineering applications.更多还原