【摘要】 用慢正电子束探针测量了经剂量为 5× 10 16cm-2 的 140keVHe+ 注入的Si(10 0 )单晶S参数与正电子入射能量的关系 ,得到了注入产生缺陷的分布规律 ,发现近表面区域损伤不大 ,缺陷主要是直径小于 1nm的空位或空位团 ,较深的射程末端区域损伤严重 ,缺陷主要是微空洞和微气泡。对退火效应的研究表明 ,低温下退火空位缺陷得到了很好的消除 ,而高温下退火微空洞和微气泡发生融合 ,而且尺度增加更多还原

【Abstract】 Si(100) crystal implanted by 5×10 16 cm -2 , 140keV He + was probed by slow positron beam, and defect distribution along depth was obtained from the relation between S parameter and positron incidence energy. The near surface region of implanted sample was only slightly damaged. Small vacancies and vacancy clusters less than 1nm in diameter were the dominant defects, while the deeper region around the He + projected range was heavily damaged and had dense larger helium microbubbles and microvoids. Thermal anneal study at different temperatures showed that low temperature annealing could remove most vacancy-type defects effectively. However, annealing at high temperature enlarged the diameters of microbubbles and microvoids.更多还原