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功率MOS器件SEB、SEGR测量系统的研制

The study and fabrication of the SEB,SEGR measure system for the power MOS transistor

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【作者】 王燕萍唐本奇耿斌杜凯

【Author】 WANG Yan ping 1,TANG Ben qi 1,GENG Bin 1, DU Kai 2( 1 Northwest Institute of Nuclear Technology,Xi’an of Shaan Prov. 710024,China; 2 Xi’an Institute of Electron Power and Electron Technology, Xi’an of Shaan Prov.710061,China )

【机构】 西北核技术研究所!西安69信箱16分箱陕西西安710024西安电力电子技术研究所!陕西西安710061

【摘要】 研制了功率 MOS器件单粒子烧毁、单粒子栅穿辐照效应实验用的电流测量及电源系统 ,该系统由栅极电源电路、漏极电源电路、漏极 RC振荡电路和 DUT栅极触发电路组成 ,具有栅 (漏 )极电压偏置、电流测量、过流保护、电容电阻选择等功能 ,经实验验证 ,本系统工作性能稳定可靠

【Abstract】 The system used in the experiment of single event burnout and single event gate rupture of power MOS transistors radiation effects has been developed. The system consists of a gate voltage supply circuit, a drain voltage supply circuit, a drain RC oscillatory circuit and a DUT gate trigger circuit.It has the capabilities of measuring the gate (or drain )voltage and current,over current protection and the selection of capacity and resistor. It has been proved by experiments that the system is reliable functional.

  • 【文献出处】 核电子学与探测技术 ,Nuclear Electronics & Detection Technology , 编辑部邮箱 ,2001年03期
  • 【分类号】TP274
  • 【被引频次】2
  • 【下载频次】85
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