【摘要】 本文采用往复区熔法生长了掺杂 Sb I3的 ( Bi2 Te3) 0 .90 ( Sb2 Te3) 0 .0 5( Sb2 Se3) 0 .0 5赝三元 n型半导体温差电材料 ,测定了晶棒轴向温差电性能 .所制备的质量为 2 0 0 0 g,直径为 33mm的 n型晶锭 ,6 0 %左右可利用部分的温差电参数分布为 :温差电动势率 α=2 0 9～ 2 0 6 μV/K;电导率 σ=935～ 1 0 30 /Ω.cm;热导率K=1 .5 2～ 1 .5 5 W/( m· K) ;温差电优值 Z=2 .6 9～ 2 .84× 1 0 - 3/K.更多还原

【Abstract】 Doped with SbI 3 the pseudotermary n-type thermoelectric material (Bi 2Te 3) 0.90 (Sb 2Te 3) 0.50 (Sb 2Se 3) 0.05 was grown by means of to and fro zone melting method and its axial thermoelectric property was mensurated. The sample crystal ingot weighted 2000g and is 33mm long.The thermoelectric parameter of about 60% its available part is as bellow: Thermoelectric power α=209~206μV/K; Electric conductivity σ=935~1030/Ω·cm; Thermal conductivity K =1.52~1.55 W/m·K; Figure of merit of thermoelectric material Z =2.69×10 -3 ~2.84×10 -3 /m·K.更多还原