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纳米晶SnO2透明导电薄膜的研制

Study of nanocrystalline SnO2 transparent conducting film

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【作者】 王占和郝群祝侃

【Author】 WANG Zhan he 1, HAO Qun 2, ZHU Kan 1 (1 Dept of Electronics Engineering, Beijing Institute of Technology, Beijing 100081, China) (2 Dept of Optoelectronic Engineering, Beijing Institute of Technology, Beijing 100081, China)

【机构】 北京理工大学电子工程系!北京100081北京理工大学光电工程系!北京100081

【摘要】 阐述了金属氧化物透明导电薄膜研究的发展情况及其应用前景。介绍了采用磁控溅射技术 ,使用混合气体Ar和O2 ,在衬底温度为 15 0~ 40 0℃的耐热玻璃基片上制备纳米晶SnO2 :Sb透明导电薄膜 ,通过测定X射线衍射谱 ,表明薄膜择优取向为 [110 ]和 [2 11]方向。测量了SnO2 :Sb薄膜的导电特性随衬底温度及氧分压的变化。光学特性测量结果表明薄膜具有较高的透过率。

【Abstract】 Antimony doped nanocrystalline Tin oxide transparent conducting films grown by dc magnetron sputtering in a mixture gas of Ar and O 2, and substrate temperature 150~400℃ The films were characterized by X ray diffracting The films showed preferred orientation in [110] or [211] plane The conductivity of films depends on the substrate temperature and Ar/O 2 The optical properties were studied by resistivity and transmittance The research and application prospects of metallic oxide transparent conducting films were reviewed too

【基金】 国家留学回国人员科研启动基金资助项目!(367 3)
  • 【文献出处】 光学技术 ,Optical Technology , 编辑部邮箱 ,2001年01期
  • 【分类号】O484
  • 【被引频次】14
  • 【下载频次】123
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