【摘要】 利用金属蒸气真空弧 (MEVVA)离子源将稀土元素Er离子掺杂到富硅热氧化SiO2 /Si薄膜中。卢瑟福背散射 (RBS)和X 射线电子能谱仪 (XPS)分析表明 ,Er浓度可达原子百分数 (x)～ 10 ,即Er的原子体浓度为～ 10 2 1·cm-3 。XPS研究发现 ,随着Si注量增大 ,退火态样品表面硅含量增多 ,热氧化硅含量减少。反射式高能电子衍射 (RHEED)和原子灵敏度因子法 (AFM)研究表明 ,样品表面没有大量Er析出或铒硅化物形成 ,退火后表层中Si外延再生长、有针状微晶硅颗粒形成。在 77K及室温下 ,研究了Er掺杂富硅热氧化SiO2 /Si薄膜的近红外区 1 5 4μm附近光致发光光谱更多还原

【Abstract】 Er ions with 108 keV to a dose of 1×10 17 cm -2 were implanted into Si rich thermal oxidation SiO 2/Si thin film using metal vapor vacuum arc (MEVVA) ion source implanter. Er concentration in as implanted sample, which was attained to -10 at.% correspond to the level of -10 21 atoms·cm -3 , was analyzed by Rutherford back scattering (RBS) and X ray photoelectron spectroscope (XPS). Contents of Er, Si and O in annealed samples were investigated using XPS at room temperature. It showed that Si content was increased and SiO 2 content was decreased with increasing the fluence of Si ions. It was found by use dof reflective high energy electron diffraction (RHEED) and atomic force microscope (AFM) that needle micro crystalline Si in the surface of annealed samples had been formed and Er segregation and precipitation were formed little. Photoluminescence around 1.54 μm from Er doped Si rich thermal oxidized SiO 2/Si thin film were studied with a He Cd laser pumping at 414 6 nm at the low temperature of 77 K and room temperature (RT).更多还原