【摘要】 通过改变O和N含量研究了SiOxNy 薄膜中从 6 0 0到 16 0 0cm- 1 范围内的红外吸收谱特征。结果表明 ,起源于单一Si—O、Si—N键的吸收峰在 110 5和 86 5cm- 1 处 ;而随着薄膜中O或N含量的升高 ,位于单一键吸收峰的两侧出现因O—Si—O、N—Si—N的对称和反对称键吸收的左右肩 ;对O—Si—N ,其特征吸收峰位于 10 36和 85 6cm- 1 处。更多还原

【Abstract】 Infrared absorptive characteristics of a-SiO xN y thin film was investigated by altering O and N content.Various molecular bonds were identified by the infrared absorption measurement.1 105 and 865 cm -1 peaks are associated with single Si—O and Si—N modes respectively.When the O and N contents increase,the peaks associated with the symmetry and anti-symmetry modes of O—Si—O and N—Si—N are measured.For N—Si—O,the aborptive peaks of Si—O and Si—N mode are located at 1 036 and 890 cm -1 respectively.更多还原