【摘要】 基于 Ti Si2 低电阻率的优点 ,采用 Ti制作肖特基二极管。在 VL SI工艺中实现同时完成钛硅化物欧姆接触和肖特基势垒二极管 (SBD)的制作。文中用 AES等技术研究不同退火工艺形成的 Ti/ Si界面形态和结构 ,寻找完善的工艺设计和退火条件。此外还测量 Al/ Ti N/ Ti/ Si结构的金属硅化物 SBD的有关特性。通过工艺实验确定 VL SI中的钛硅化物最佳的制作工艺条件更多还原

【Abstract】 The advantage of low resistivity of TiSi 2 makes Ti beneficial to be used to fabricate Schottky barrier diodes(SBD). Ti silicide ohmic contact and Schottky contact can be obtained at the same time in VLSI process. The advanced analysis techniques like AES have been used to investigate the interface of Ti/Si after different annealing cycles to optimize the process design and annealing factors. In addition, the related properties of metallic silicide SBD with Al/TiN/Ti/Si structure are measured. The optimal processing condition in the Ti silicide metallization of VLSI is determined through a series of experiments.更多还原