【摘要】 提出一种集成化平面肖特基变容管微波频段 C- V特性物理模型 ,该模型考虑了由平面结构引起的分布有源层串联电阻、分布结电容、结反向饱和漏电流及侧壁电容对微波频段 C- V特性的影响 ,揭示了集成化平面肖特基变容管 C- V特性对频率的依赖 ,并对变容比作了讨论。模型与实验结果符合得很好更多还原

【Abstract】 A model of integrated planar Schottky varactor diode microwave C V characteristic is presented.The distributed channel series resistance introduced by planar configuration,distributed junction capacitance,junction reverse saturation leakage and sidewall capacitance were considered in the model,and the integrated planar schottky varactor diode C V characteristics as a function of frequency were revealed,the capacitance ratio was discussed.The model is in good agreemenet with the experiment.更多还原