【摘要】 用 Sol- Gel方法研制了 PL T[(Pb0 .83 L a0 .17) Ti O3 ]铁电薄膜 ,结合非挥发性铁电存储器对铁电电容的要求 ,研究了 Au/ PL T/ Pt铁电电容和漏电流、剩余极化、疲劳、开关特性和揭电常数等性能。对厚度为 0 .4 μm的薄膜 ,5 V时的剩余极化强度 Pr=2 2 μC/ cm2 ,矫顽场强度 Ec=6 0k V/ cm,相对介电常数约 130 0 ,漏电流 Id=3.2× 10 -8A/ mm2 ,开关特性优良。疲劳测试表明 ,对Vpp=10 V的锯齿信号 ,经 4 .5× 10 11周期后 ,剩余极化强度衰减 2 0 %。上述性能表明 ,该 PL T膜能用于非挥发性铁电存储器的试制更多还原

【Abstract】 The PLT[(Pb 0.83La 0.17)TiO 3]thin film was prepared by a Sol-Gel method according to the requirements of non-volatile ferroelctric random access memory(FERAM) on ferroelectric capacitor. The electrical properties, such as the hysteresis loop, dielectric constant, leakage current, fatigue and switching characteristic were measured. The results show that the polarization switching is excellent, the remanent polarization is about P r=22 μc/cm 2,coercive field is E c=60 kV/cm, effective dielectric constant K df=1300, leakage current I d=3.2×10 -8 A/mm 2 for a 0.4 μm PLT film at 5 V. Fatigue measurement illustrated the remanent polarization P r was reduced by 20% after 4. 5×10 11 cycles at a peak to peak voltage ,V pp=10 V of saw tooth signal.更多还原