【摘要】 在对硅材料基本物理参数的高温模型和宽温区 ( 2 7～ 30 0℃ ) MOSFET基本特性深入研究的基础上 ,进一步研究了宽温区 MOSFET的非常数表面迁移率效应。理论和实验研究结果表明 ,由于高温下晶格散射加剧 ,使表面纵向电场对载流子迁移率的影响减弱 ,使小尺寸 MOSFET横向电场引起的载流子饱和速度下降更多还原

【Abstract】 In this paper, the unconstant surface mobility effect of MOSFET in the wide temperature range from 27℃ to 300℃ is deeply studied on the base of investigation of the high temperature models of fundamental physical parameters in silicon and the fundamental characteristics of the MOSFET. The theoretical and experimental results indicate that because the lattice scatter increase significantly at high temperature, the effect of vertical electrical field on the surface carrier mobility and the carrier′s saturated velocity caused by the lateral electrical field will decrease.更多还原