【摘要】 研究了全碳粉反应渗硅碳化硅 (PCRBSC)材料 ,在 1 3 0 0℃静态空气中的高温氧化行为。研究结果表明 :PCRBSC材料的氧化过程遵循直线—抛物线规律 ,其结构对高温氧化有很大的影响 ,特别是游离硅fsi和游离碳fc 的含量对氧化影响更大 ,fsi含量高的PCRBSC材料单位面积氧化增重 (Δm/s)明显 ,fc 含量高的PCRBSC材料氧化后表现为先减重后增重 ,氧化层断口经扫描电镜观察有明显的气孔存在。更多还原

【Abstract】 High temperature oxidation behavior of pure Carbide melt infiltrated silicon carbide(PCRBSC) in air at 1300℃ was investigated.The experimental result shows that the oxidation kinetics curve of the PCRBSC material obeys line logarithmic equation.The structure,especially the contents of free silicon and carbide of the PCRBSC material have great effect on high temperature oxidation behavior.The more free silicon content in the PCRBSC material,the more increase in weight per square(Δm/s)after oxidation.The weight of PCRBSC material with free carbide first decreases,then increases.The pores were observed obviously in the section of oxidation layer by SEM.更多还原