【摘要】 使用PbMg1/3Nb2/3O3-PbTiO3-PbCd1/2W1/2O3三元系电容器瓷料,采用流延工艺成膜,丝网印刷内电极,低温烧结的方法制备了陶瓷衬底。陶瓷衬底的烧结温度为930～9500C。测量了陶瓷厚膜的基本特性,在室温时的相对介电常数εr大于14000,损耗tanδ约为1%,具有极高的品质因素(≥80μC/cm2)。用SEM技术观察了陶瓷衬底的横断面和陶瓷厚膜表面形貌,内电极连续,厚膜层致密且表面起伏较小,可直接沉积发光层。制备了陶瓷厚膜为绝缘层的ZnS:Mn低压驱动电致发光器件,在50Hz正弦波驱动下,阈值电压仅为41V。更多还原

【Abstract】 A novel CIEL device using a sintered multilayer ceramic substrate ,consisting of a very high dielectric constant ceramic thick f ilm insulating layer,Ag /Pd alloy in ternal electrodes and a ceramic base was prepared.The composition o f the ceramic thick film was PbMg 1/3Nb2/3O3(PMN)-PbTiO3(PT)-PbCd1/2W1/2O3(PCW).The ceramic thick film and the internal electrodes were fabricated by casting tape process and silk -screen process,respectively.The ceramic substr ate was fabricated by the green sheet laminating technology and fir ed at a low sintering temperature,930～950℃.The relative dielec -tric constant and the loss for the ceramic thick film is more than 14000and about 1%at room tempera -ture.As a insulating layer for the CI EL devices,the figure of merit of the ceramic thick film with a value above 80μC /cm2,is much higher than that of the ordin ary thin film insulators.Scanning e lectron mi croscopy(SEM)was used to investigate the morpholo gy of the cross section of the substra te and the surface of the ceramic thick film.The CIEL device with ZnS:Mn as an active layer and Y2O3as an upper insulator has a low threshold voltage of 41V under 50Hz sinusoidal wave voltage driving.更多还原