【摘要】 用多孔硅外延层转移的方法成功地制备出了SOI材料,卢瑟福背散射/沟道谱(RBS/C)和扩展电阻(SPR)的结果表明获得的SOI材料上层硅具有很好的单晶质量,电阻率分布均匀,上层硅与氧化硅埋层界面陡直。对制备多孔硅的衬底材料也作了研究,结果表明P型重掺杂的硅衬底在暗场下阳极氧化后仍保持很好的单晶性能,用超高真空电子束蒸发方法能外延出质量很好的单晶硅,并且,在一定浓度的HF/H2O2溶液中具有较高的腐蚀选择率,保证了上层硅厚度的均匀性。更多还原

【Abstract】 SOI material was successfully fabr icated by using epitaxial layer tran sfer of porous silicon.The result of Rutherford backscatte ring spectroscopy and channeling(RBS /C)shows that the crystal -line quality of top Si layer is good.S preading resistance probe technolo gy(SRP)indicates that the resistivity of top silicon layer is u niform and the interface between the top silicon layer and SiO 2 buried layer is very sharp.The effect of silicon type before anodizing on the sub sequent steps was also studied.Experimental results show that the p orous silicon made from P type Si main tains good crystalline quality.And epitaxial silicon layer with goo d crystalline quality grew on it by using ultra -vacuum electronic beam evaporation.Furthermore,com paring body silicon,the corrosion r ate in HF /H2O2solution with a certain concentration is very high,which ensures the thickness of top S i layer.更多还原