【摘要】 利用超高真空磁控溅射系统生长了不同偏压下Ge/Si薄膜材料 ,所生长的材料采用了不加偏压和加偏压的生长环境。通过X射线小角衍射分析表明 ,加一定偏压的Ge/Si薄膜材料的层状远比不加偏压的材料好 ,并且加偏压可有效降低材料的生长温度。在加 15～ 2 5V偏压时 ,获得了 30 0℃的生长温度下 ,层状优良 ,粗糙度小的薄膜材料更多还原

【Abstract】 A group of Ge/Si multilayer film were fabricated by UHV-MSE(ultra high vaccum magnetron sputtering expicity system) at different bias. Small angel X ray diffraction characterized method show that: The quantity of Ge/Si multilayer with bias is better than that without bias; The temperature of the growth can be reduced by bias. The Ge/Si multilayers with sharp layer and roughness is fabricated at the 15～25V bias and 300℃ sputtering temperature.更多还原