【摘要】 采用超高真空电子束蒸发的方法在用阳极氧化制备的多孔硅衬底上外延单晶硅 ,研究了不同多孔硅衬底对外延质量的影响。采用高能电子衍射表征外延层的晶体结构 ,截面透射电镜表征材料的微结构 ,原子力显微镜表征外延层表面的粗糙度 ,卢瑟福背散射 /沟道表征外延层晶体质量 ,扩展电阻表征材料的电学性能。一系列的测试结果表明对于在 5mA/cm2 电流密度下阳极氧化 10min形成的多孔硅衬底 ,可用超高真空电子束蒸发的方法外延出质量良好的单晶硅更多还原

【Abstract】 Epitaxial silicon with high quality has been successfully grown on porous silicon by ultra-vacuum electron beam evaporator. The effect of porosity of porous silicon on epitaxy was also studied. High energy electron diffraction (HREED), cross section transition electron microscopy (XTEM), atomic force microscopy (AFM), Rutherford backscattering and channeling spectroscopy (RBS/C) were used to analyze the quality of epitaxial layer. And spreading resistance probe (SRP) was also used to measure the electrical properties of samples. The results show that the epitaxial silicon on porous silicon, which was made in the electrolyte HF∶ ethanol =1∶1 at the current density 10 mA/cm 2 for 10min without illumination, exhibits good quality.更多还原