【摘要】 用Raman光散射的方法 ,观察了磁控溅射技术制备的Ge/Si系列多层膜退火处理后的各Raman峰的变化 ,对其峰形、峰位及峰强的变化进行讨论分析。实验结果显示 :Ge/Si多层膜经 70 0℃热处理 10min后 ,能改善各层的晶体质量 ,得到较完整的多层膜的结构。更多还原

【Abstract】 The Ge/Si multilayer films were grown by magnitron sputter deposition. Raman spectra had been used to characterize the change in structural order of as deposition and the post annealing at different temperatures. The position of peaks and their widths were disscussed. The result indicated the quality of the crystal in the films have fine integrity after annealed by 700℃ for 10min.更多还原