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Y掺杂对BaTiO3系半导化薄膜PTCR特性的影响
Effect of Yttrium Content on the PTCR Characteristics of BaTiO3 Semiconductive Thin Film
【摘要】 介绍了Y掺杂对BaTiO3 系半导化薄膜PTCR特性的影响。实验发现 ,当Y掺杂浓度在 0 .1mol%~ 1.5mol%时 ,薄膜的室温电阻为 10~ 5 0Ω ,突变温区为 1℃。在 [Y3 + ] =0 .7mol%时 ,薄膜的升阻比达 10 6。实验结果表明 :薄膜的转变温度、升阻比和室温电阻与Y掺杂浓度有关。
【Abstract】 The paper reported that the effect of yttrium content on the PTCR characteristics of BaTiO 3 semiconductive thin films.When the yttrium content is (0.1~1.5)mol%,the room temperature resistance is only about 10~50Ω,and the temperature range of resistance sharp change is only 1℃. The resistance ratio reach 10 6 at 0.7mol% for yttrium content. The experimental results shows that the room temperature resistance, the Curie temperature and the resistance ratio is depend on the yttrium content.
- 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2001年01期
- 【分类号】TN304
- 【被引频次】19
- 【下载频次】81