【摘要】 本文对三沟道体电荷耦合器件 (BCCD)在 X光区的光电特性进行了数值模拟。结果表明 ,硅对 X光的吸收曲线决定了硅制的三沟道 BCCD不能在 X光区实现多光谱成像。通过理论分析 ,找出了能保证 BCCD在 X光区工作的衬底材料所应满足的吸收曲线。利用这种新材料制成的三沟道 BCCD,其光敏特性可以分别在 1.8ke V、1.2 ke V和 0 .6 ke V处出现最大值更多还原

【Abstract】 In this paper the photoelectric characteristics of the three channel bulk charge coupled device (BCCD) are simulated in the region of X ray.The results show that the silicon three channel BCCD can not realize multi spectral imaging in the region of X ray.Based on the result of theoretical research the absorption coefficient curve of a substrate material has be found,which ensure the three channel BCCD work in the region of X ray.The three channel BCCD made by the new material will have three maxim positions of the spectral photosensitivity at 1.8 keV,1.2 keV and 0.6 keV,respectively.更多还原