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氧化铟锡靶与铟的润湿性研究
Study on the wettability between ITO target and indium
【摘要】 为了解决氧化铟锡靶与铟的不润湿 ,采用了一种特殊的方法 ,在 ITO靶与铟熔体界面处 ,对铟熔体施加局部的高压处理 ,增加了 ITO界面的亚微观缺陷 ,促进了 In与 ITO的渗透和交融 ,实现了 ITO靶与铟的润湿和铺展 ,为 ITO靶和 Cu靶座的焊接奠定基础
【Abstract】 In order to overcome the un wettability between ITO target and In, a special process method is introduced At the interface of ITO target and In melt, exerting localized high pressure on In melt can increase the submicroscopic defects of ITO surface, causing In to penetrate into ITO and binding of them. The resultant wetting and spreading between ITO target and In lay a foundation for the brazing between ITO target and Cu base.
- 【文献出处】 广东有色金属学报 ,Journal of Guangdong Non-ferrous Metals , 编辑部邮箱 ,2001年02期
- 【分类号】TG454
- 【被引频次】3
- 【下载频次】155