【摘要】 分析和模拟了SiC JFET在高温下出现的栅电流。模拟结果反映出在温度高于700K以后栅电流对SiC JFET的影响将越来越显著,在此基础上该文建立起了一个6H-SiC JFET的高温模型。模型中采用了SiC的两极电离杂质模型和Caughey-Thomas方程。在300-773K的温度范围内,模型的模拟结果和实验数据相符。更多还原

【Abstract】 The gate leakage current of 6H-SiC JFET in high temperature has been analyzed and simulated, The result shows that the effect of the gate leakage current on JFET will become more and more notable when the temperature is higher than 700K. Based on the analysis, a modei of 6H-SiC JFET for high temperature is proposed, in which the two-level donor ionization modei and Caughey-Thomas equation are included. The simulated results are in good agreement with measured data in a wide range of temperature from 300K to 773K.更多还原