【摘要】 同质结硅双极晶体管在共射极状态下工作中 ,在高集电极———发射极电压、大电流下 ,由于热电正反馈 ,容易发生热击穿 ,这限制了晶体管的安全工作区域。本文报道了在大电流下 ,由于热电负反馈 ,重掺杂基区Si/SiGe/HBT出现了负阻特性 ,并对这一现象进行了新的解释 ,认为这是由于大电流下耗散功率增加 ,基区俄歇复合导致电流增益随温度增加而减小的结果 .这一现象有利于改善大电流下双极晶体管的抗烧毁能力 ,证明Si/SiGe/HBT适于大功率应用更多还原

【Abstract】 For homo-junction Si bipolar transistor operation under common emitter,because of the positive feedback of thermoelectricity,thermal breakdown occurs easily at high collector--emitter voltage and high current,this decreases the safe oper ation area of transistors.In this paper,due to negative feedback of thermoelectr icity,negative resistance characteristics of Si/SiGe/Si double hetero-junction bipolar transistors with heavily doped base at high currents is reported.A new i nterpretation to this phenomenon is given.This is resulted from Auger recombinat ion in the base and decrease in current gain at high current as temperature incr eases.This phenomenon has benefit to improve anti-burnout capability of bipolar transitors.The results suggest that Si/SiGe/HBT is suitable for high power appl ications.更多还原