节点文献
光电双基区晶体管(PDUBAT)物理模型探讨
Discussion on the Physical Model in Photoelectric Dual Base Transistor
【摘要】 本文通过分析器件内部电流传输探讨了光电双基区晶体管 (PDUBAT)负阻特性产生机理 ,首次提出了PDUBAT负阻形成的原因是其输出管横向输出电流的反馈作用 ,这一看法得到了实验验证
【Abstract】 Through analyzing the internal current transport in photoelectric dual-base tra nsistor(PDUBAT),the physical mechanism for the origin of the negative resistance characteristic in the device has been discussed.In this paper,we propose that t he cause for the negative resistance in PDUBAT is coming from the feedback effec t of the lateral component of output current of the vertical transistor in PDUBA T for the first time. This viewpoint has been confirmed by experiment.
【关键词】 光电双基区晶体管;
间接耦合光电探测器;
【Key words】 photoelectric dual-base transistor; indirect coupling photoelectric detector;
【Key words】 photoelectric dual-base transistor; indirect coupling photoelectric detector;
【基金】 天津市自然科学基金资助项目 (No 98360 1 4 1 1 )
- 【文献出处】 电子学报 ,Acta Electronica Sinica , 编辑部邮箱 ,2001年08期
- 【分类号】TN364
- 【被引频次】7
- 【下载频次】39