【摘要】 用溶胶凝胶浸渍技术在三氧化二铝基片上制备了纯和 (m(Pt) :m(WO3 ) =0 .3% )铂搀杂的三氧化钨膜 .测量和比较了 4 5 0 - 85 0℃温度范围内不同退火温度的纯和铂搀杂三氧化钨膜的电阻 ,理想的退火温度为 6 5 0℃ .纯三氧化钨膜的理想工作温度为 35 0℃ ,对 4 0× 10 - 6一氧化氮的灵敏度为 8.9;铂搀杂三氧化钨膜的理想工作温度为 2 5 0℃ ,对 4 0× 10 - 6一氧化氮的灵敏度为 114.0 .实验结果显示溶胶凝胶制备的铂搀杂三氧化钨膜对一氧化氮具有高的灵敏度 ,低的工作温度 ,快速和可重复的响应更多还原

【Abstract】 Pure and Pt doped ( m( Pt ):m( WO 3)=0.3%) WO 3 thin films were prepared using the sol gel process by the dip coating technique on alumina substrates. The resistance of pure and Pt doped thin films fired at various temperatures in the range of 450-850?℃ were measured and compared. An optimum sintering temperature was judged to be 650?℃. The pure WO 3 thin films maximum sensitivity to 40×10 -6 NO was 8.9 at optimum operating temperature 350?℃. Maximum sensitivity of the Pt doped ( m( Pt ):m( WO 3)=0.3%) WO 3 thin film’s to 40×10 -6 NO was 114.0 at optimum operating temperature 250?℃. The experimental results demonstrated that Pt doped WO 3 thin films obtained by sol gel technique have high sensitivity, low operating temperature, fast and reproducible response to NO. 更多还原