【摘要】 制备了Si、Ti双组元和Si、Ti、B4 C三组元掺杂石墨材料并研究了其结构和性能 .实验结果表明 ,与相同条件下制得的纯石墨材料相比 ,掺杂石墨材料具有高密度 ,高强度以及极低的电阻率等特点 .双组元掺杂石墨的导电性略优于三组元掺杂石墨 ,但其机械强度却明显低于后者 .分析表明 :各组元在材料中所起的作用各不相同 ,钛、硼添加剂对材料的机械强度有增强作用 ,对材料的石墨化具有催化作用 ;少量硅的添加有利于石墨材料的石墨化程度以及导电性能的提高 ,但含量较多时 ,由于Si的大量逸失导致气孔率增大 ,使掺杂石墨的导电性及机械性能降低更多还原

【Abstract】 Microstructure and some basic properties of Si, Ti(bi-element) and Si, Ti, B 4C(tri-element) doped graphite were investigated in order to discuss the effects of dopants. Experimental results show that all the doped graphite materials posses high level of densification & graphitization and much lower electrical resistivity compared with pure graphite produced by the same process. Microstructure analysis indicates that dopants serve as catalysts to accelerate graphitization. But there is still some difference between the bi-and tri-element doped graphites, bi-element doped graphite shows a higher electrical resistivity and a lower mechanical strength. However, the electrical conductivity and mechanical strength of the doped graphite materials decrease with further increasing Si addition, as a result of the formation of large cavities because of the evaporation of Si during high temperature processing. To develop multi-element doped graphite materials with high performance, the dopants concentration and preparation process should be optimized.更多还原