【摘要】 采用ＭＥＶＶＡ离子源强束流离子注入机，将稀土Ｅｒ离子注入单晶硅、Ｓｉ和Ｅｒ离子双注入单晶硅及热氧化硅，Ｅｒ在硅基薄膜中的掺杂原子分数可达１０％，即数密度约１０２１ｃｍ－３；注入态样品快速退火后有纳米晶Ｓｉ形成；７７ Ｋ和室温时用４４１．６ｎｍ光激发有Ｅｒ３＋较强的１．５４μｍ特征光发射．探讨了在硅基材料中高浓度Ｅｒ掺杂薄膜中纳米结构的形成与Ｅｒ３＋的光致发光性能，更多还原

【Abstract】 Erbium-doped silicon and silica films are fabricated by ion implantation performed on MEVVA ion source implanter. After rapid thermal annealing, 1. 54 μm photo- luminescence is observed at 77 K and room temperature. Er ions are mainly distributed near the surface of the samples, and Er peak concentration exceeds the magnitude of 1021 cm-3. Needle-like nanometer crystalline silicon (nc-Si) is formed on Si surface and nc-Si is embedded in silica films. The mechanism of nc-Si formation and Er3+ luminescence are investigated.更多还原