【摘要】 针对半导体器件研制过程中等离子体刻蚀工艺的具体需要 ,研究了硅的低速率刻蚀和钨薄膜的刻蚀 .得到了加磁场条件下刻蚀速率与刻蚀气体流量、射频功率的关系曲线 .得到了不加磁场时不同刻蚀气体流量下钨的刻蚀速率 ,以及在刻蚀气体中掺杂不同比例氧气时硅的刻蚀速率 .对上述结果加以简单的讨论并给出了符合工艺要求的刻蚀条件 .更多还原

【Abstract】 The etching of silicon at low rate and the etching of tungsten films are studied. The etching rate of such two materials is obtained at different runoffs of gas and different radio power for etching. The effects of magnetic field and adding oxygen on the etching velocity are also studied. Satisfied etching conditions are obtained.更多还原