【摘要】 应用Mg离子注入MOCVD法生长掺杂Mg的GaN中 ,在经过 80 0℃ ,1h的退火后 ,获得高空穴载流子浓度 (8 2 8× 10 17cm-3 )的P 型GaN。首次报道了实验上通过Mg离子注入到Mg生长掺杂的GaN中并获得高的表面空穴载流子浓度更多还原

【Abstract】 Mg ions were implanted on Mg\|doped GaN grown by metalorganic chemical vapor deposition(MOCVD).The p\|type GaN was achieved with high hole concentration(8.28×10 17 ?cm -3 )conformed by Van der pauw Hall measurement after annealing at 800?℃ for 1?h.This is the first experimental report of Mg implantation on Mg\|doped GaN and achieving p\|type GaN with high surface hole concentration.更多还原