【摘要】 用改进的液相外延法生长了大功率 In Ga As P/Ga As半导体激光器 ,实验测量和理论分析都表明用该方法生长的单量子阱分别限制异质结构 ,达到了设计要求 ,阈值电流密度为 30 0 A/cm2 ,斜率效率达 1 .32 W/A,具有很高器件质量更多还原

【Abstract】 High power InGaAsP/GaAs semiconductor lasers have been grown by liquid phase epitaxy Measurements and theoretical analysis showed that the SQW SCH grown by the method is of high quality and is in good agreement with the design更多还原