【摘要】 对氮化 H2 - O2 合成薄栅氧抗辐照性能进行了研究 ,将 H2 - O2 合成和氮氧化栅两种技术结合起来 ,充分利用两者的优点制成三层结构的 Sandwich栅 ,对比常规氧化、H2 - O2 合成氧化和氮化 H2 - O2 合成氧化三种方式及不同退火条件 ,得出氮化 H2 - O2 合成氧化方法抗辐照性能最佳 ,采用硅化物工艺加快速热退火是未来抗辐照工艺发展的趋势 ;并对氮化 H2 - O2 合成栅的抗辐照机理进行了研究更多还原

【Abstract】 The ionizing radiation characteristics of the nitrided thin gate oxide grown in H 2 O 2 ambient are presented.Considering the advantages of both H 2 O 2 oxidation and nitridation,a three layer structure "Sandwich" gate oxide is fabricated.Compared with other methods,such as normal dry O 2 oxidation,H 2 O 2 oxidation and different annealing processing,the nitrided H 2 O 2 grown oxide,combined with silicide and RTA process,is considered to be the optimum process for radiation hard technology.Its radiation hardness mechanism is also discussed.更多还原