【摘要】 用卤素钨灯作辐射热源快速热氮化 (RTN) 10 nm Si O2 膜 ,制备了〈10 0〉和〈111〉晶向 Si衬底上的 Si- Si Ox Ny-Al电容结构 .研究了电子从〈10 0〉和〈111〉不同晶向 N型硅积累层到 RTN后 Si O2 膜 (或原始 Si O2 膜 )的漏电流和高场 F- N隧穿电流 .研究结果表明 :经 RTN Si O2 膜比原始 Si O2 膜从低场到隧穿电场范围都明显地看到电导增强现象 .比较 RTN后两种不同晶向样品 ,低场漏电流没有多大的差别而在高场从〈10 0〉晶向比从〈111〉晶向 Si隧穿Si Ox Ny 膜的 F- N电流却明显增加 ,借用一种基于横向晶格动量守恒的理论模型解释了这种现象更多还原

【Abstract】 The Si SiO x N y Al capacitors are fabricated on both <100>and <111> oriented Si by Rapid Thermal Nitridation (RTN)10nm SiO 2 films with a tungsten halogen lamp as radiation source heating.The electron F N tunneling currents in a higher field and the leakage current in a lower field are studied,which are both from the <100> and <111> oriented N type Si accumulation layer into the RTN SiO 2 (or original SiO 2).The results show that in the lower field,the current is enhanced after the original SiO 2 rapid thermal nitrification.No difference in the leakage current can be observed in the lower field for both the orientations;while in the higher field,the F N tunneling current is markedly increased from the <100> oriented compared with that from the <111> oriented capacitors,which can be explained by using to theory model on the basis of the conservation of transverse crystal momentum.更多还原