【摘要】 用脉冲 Ar F准分子激光熔蚀 Si C陶瓷靶 ,在 80 0℃ Si(10 0 )衬底上淀积 Si C薄膜 ,经不同温度真空 (10 - 3Pa)退火后 ,用 FTIR、XRD、TEM、XPS、PL 谱等分析方法 ,研究了薄膜最佳晶化温度及表面形态、结构、组成 ,并对在最佳退火温度处理后的样品进行了化学态、微结构及光致发光的研究 .结果表明 ,在 Si(10 0 )上 80 0℃淀积的样品为非晶Si C薄膜 .经 85 0— 10 5 0℃不同温度真空退火后 ,Si C薄膜经非晶核化 -长大过程 ,在 980℃完成最佳晶化 .随退火温度的变化 ,薄膜中可能存在 3C- Si C与 6 H- Si C的竞争生长或 /和 3C- Si C相的长、消 (最佳温度退火样品中 6 H- Si C和 3C- Si C两种晶相共存 ) .以 370 nm波长光激发样品薄膜表面 ,显示较强的 44 7nm蓝光发射 ,其发光机制可能是空位缺陷及其它晶格缺陷形成的浅施主能级向价带的电子辐射复合跃迁更多还原

【Abstract】 By ablating a ceramic SiC target with pulsed ArF excimer laser,SiC films are prepared on Si(100) substrate at 800℃.After annealing in vacuum (10 -3 Pa) at different temperatures,the films are examined with Fourier Transform Infrared Reflectance (FTIR),X Ray Diffraction (XRD),Transmission Electron Microscopy (TEM),X ray Photoelectron Spectroscopy (XPS) and photoluminescence spectroscopy (PL) to investigate the optimal temperature of crystallization,surface morphology,crystal structure and composition.The chemical state of the elements,microstructure and photoluminescence of the film annealed at the optimal temperature are also studied.The films deposited on Si(100) substrates at 800℃ are all composed of amorphous SiC.The nucleation growth transformation occurs in SiC films annealed in vacuum at a temperature between 850℃ and 1050℃.The films will be crystallized optimally at 980℃.The transformation from 3C SiC to 6H SiC or/and the growth and annihilation of 3C SiC may occur in the films with the increase of the annealing temperature (6H SiC and 3C SiC exist in the film annealed at the optimal temperature).Excited by 370nm light at room temperature,the film is found a strong emission peak at 447nm.The emission may be assigned to the recombined radiative transition between the valence band and the shallow donor levels induced by the vacancies and other crystal defects.更多还原