【摘要】 报道了通过 Co/ Ni/ Si Ox/ Si(10 0 )体系固相反应 ,实现三元硅化物 (Co1 - x Nix) Si2 薄膜外延生长及薄膜特性的表征 .测试结果表明 ,中间氧化硅层对原子扩散起到阻挡作用 .XRD和 RBS图谱显示 ,有中间层的样品所形成的硅化物膜和硅衬底有良好的外延关系 .而 Co/ Ni/ Si(10 0 )体系 ,则形成多晶硅化物膜 ,和硅衬底没有外延关系 .外延三元硅化物 (Co1 - x Nix) Si2 膜的晶格常数介于 Co Si2 和 Ni Si2 之间 ,从而可以降低生成膜的应力 .薄膜的厚度约为110 nm;最小沟道产额 (χmin)为 2 2 % .外延三元硅化物膜的电阻率约为 17μΩ· cm ;高温稳定性达 10 0 0℃ ,与 Co Si2膜相当更多还原

【Abstract】 A ternary epitaxial (Co 1-x Ni x )Si 2 thin film is grown by the solid state reaction of Co/Ni/SiO x /Si(100) system and characterized by using various techniques,such as XRD,RBS and four point probe.The results show that the oxide interlayer can act as a diffusion barrier.XRD and RBS spectra show that the (Co 1-x Ni x )Si 2 film formed from Co/Ni/SiO x /Si(100) system has the crystal orientation parallel to the substrate.In contrast,the film formed from Co/Ni/Si(100) system is polycrystalline,without any epitaxial relations with the substrate.The lattice constant of the ternary (Co 1-x Ni x )Si 2 film is between that of CoSi 2 and NiSi 2 and therefore,the strain in a silicide film is lowered.The present film is about 110nm in thickness and its minimum channel yield ( χ min ) is 22%.The resistance of the epitaxial film is about 17μΩ·cm,with the thermal stability as high as 1000℃.Thus,the epitaxial film is comparable with a high quality CoSi 2 film.更多还原