【摘要】 给出一种新的 RF功率器件结构 -梳状基区结构 .在不增加本征集电结面积的情况下 ,该结构能显著改善 RF功率晶体管散热特性 ,增大器件的耗散功率和输出功率 ,较好地缓解了传统结构中高工作频率与大输出功率之间的矛盾 .模拟分析表明 ,采用该结构 ,器件的雪崩击穿电压能提高到理想平行平面结的 90 %以上 ,器件的大电流特性和频率特性也有所改进 .采用该技术制作的试验样管 DCT375同传统结构器件相比 ,其热电特性得到显著的改善 .这种结构为新型超高频、微波大功率管的研制开辟了新途径 .更多还原

【Abstract】 A new base-combed structure of RF power transistor is proposed,which can markedly improve the heat-radiating property of RF power transistors,increase the dissipation power and out-put power,and alleviate the contradiction of high operation frequency and large out-put power in the RF power transistors with traditional structures.The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel planar junction,and the large current characteristics and frequency characteristics can be improved,too.Compared with the transistors with traditional structure,the experimental sample DCT375 fabricated by using this technology has better thermoelectric characteristics.This structure paves a new path for the research and fabrication of new ultra high frequency and microwave large power transistors.更多还原