【摘要】 用直流反应磁控溅射法在硅衬底上沉积 C轴择优取向的 Zn O晶体薄膜 ,薄膜呈柱状结构 ,柱状晶直径约为10 0 nm,晶柱内为结晶性能完整的单晶 ,而晶界处存在较大的应力 .Zn O薄膜在 He- Cd激光器激发下有较强的紫外光发射 ,晶界应力引起 Zn O禁带宽度向长波方向移动 ,提高衬底温度有利于降低晶界应力和抑制深能级的绿光发射 .更多还原

【Abstract】 C -axis uniquely oriented ZnO films co mposed of columnar crystallites of 100nm in size are prepared by DC reacti ve magnetron sputtering on (100)Si substrate.TEM image indicates that columnar crystallites are perfect single crystal insides,except for the larger stress alo ng the grain boundary.UV photoluminescence(3 3eV) is observed when ZnO films are excited by He-Cd laser at room temperature.Stress at boundary causes an int rinsic UV emission peak shift to the lower energy .Oxygen vacancy or zinc int erstitial causes deep-level emission.With higher substrate temperature,the crys tallinity is improved and the stress and deep-level green emission is reduced.更多还原