【摘要】 采用改进的 RCA清洗工艺提高了硅片的低温键合质量 ,提出了一种积聚式缓慢退火剥离方法用于制备智能剥离 SOI (Silicon On Insulator)材料 ,并用该材料成功地研制了双岛 -梁 -膜结构的 SOI高温压力传感器 .对 SOI压力传感器的测量结果表明 ,当温度增加到 15 0℃左右时 ,输出电压没有明显的变化 ,其工作温度高于一般的体硅压力传感器 (其工作温度一般在 12 0℃以下 ) .测得所制备 SOI压力传感器的灵敏度为 6 3m V/ (MPa· 5 V) ,比用相同版图设计和工艺参数制备的多晶硅压力传感器高约 7倍多更多还原

【Abstract】 The quality of low temperature bonded silicon wafers has been improved by using a modified RCA cleaning process.A slow annealing process is used to split the bonded wafers in order to fabricate Smart Cut SOI (Silicon On Insulator) materials.High temperature pressure sensor with a double islands beam membrane structure has been successfully fabricated with these SOI materials.The results of measurement on SOI pressure sensors reveal that the output voltage is not changed obviously at about 150℃.If the package process has been improved,the SOI pressure sensors are expected to work normally at 300℃,much higher than the bulk silicon pressure sensors (work temperature less than 120℃).The sensitivity of the SOI pressure sensor is about 63mV/(MPa·5V),about 7 times as much as that of the poly Si pressure sensor that is fabricated with the same layout design and process parameters.更多还原