【摘要】 在分析 Si C中杂质部分离化时 ,考虑了 Frenkel- Pool效应 ,通过求解 Si C MOS表面空间电荷区中的一维Poisson方程 ,提出了一个新的 Si C MOSFET反型层薄层电荷 (charge- sheet)数值模型 .对 Si C中杂质不完全离化的研究表明 ,杂质原子较大的离化能、高的掺杂浓度以及低温会使不完全离化的影响增强 ,对于 Si C MOSFET,杂质不完全离化的影响主要在亚阈区更多还原

【Abstract】 The influence of incomplete ionization of acceptors in 6H SiC on the MOSFET electrical characteristics is investigated,with the Frenkel Pool effect being considered,which can enhance the impurity ionization by lowing the effective barrier height.A new numerical Charge Sheet model for SiC MOS inversion layers is presented based on the numerical solution of the one dimension Poisson equation,with the results in good agreement with the measured ones.It shows that high ionization energy,low temperature and increased doping concentration can enhance the effect of incomplete ionization on the dependence of inversion charge on gate voltage.The impact of incomplete ionization on SiC MOSFET is more notable in the subthreshold region than that in a strong inversion region.[KH3/5D]更多还原