【摘要】 采用栅氧化前硅表面在 H2 SO4/ H2 O2 中形成化学氧化层方法和氮气稀释氧化制备出 3.2、 4和 6 nm的 Si O2超薄栅介质 ,并研究了其特性 .实验结果表明 ,恒流应力下 3.2和 4nm栅介质发生软击穿现象 .随着栅介质减薄 ,永久击穿电场强度增加 ,但恒流应力下软击穿电荷下降 .软击穿后栅介质低场漏电流无规则增大 .研究还表明 ,用软击穿电荷分布计算超薄栅介质有效缺陷密度比用永久击穿场强分布计算的要大 .在探讨软击穿和永久击穿机理的基础上解释了实验结果更多还原

【Abstract】 The electrical characteristics of the ultra thin gate oxides (3 2—6nm) are studied.A soft breakdown occurs in the gate oxides of 3 2 or 4nm in thick under a constant current stress.The more the gate oxide thins,the smaller its soft charge to breakdown gets,but the larger its breakdown field becomes.After the soft breakdown,the leakage current at the low electric field increases irregularly.In addition,the effective defect density calculated from the soft charge to breakdown distribution is larger than that from breakdown field distribution.The experimental results are explained based on the mechanism of the soft and catastrophic breakdown.更多还原