【摘要】 研究了低能量背面 Ar+轰击对 n-沟 MOSFET特性的影响 .用低能量 (5 5 0 e V)氩离子束轰击 n-沟 MOSFET芯片的背面 ,能改善其阈值电压 VT、跨导 gm、沟道电导 gd 和有效迁移率 μeff等参数 .结果表明 ,随着轰击时间的增加 ,阈值电压先减小 ,随后变大 ;而跨导、沟道电导和有效迁移率先增大 ,随后减小 .实验证明 ,上述参数的变化是由于界面态密度和固定电荷密度变化的结果更多还原

【Abstract】 Influence of backsurface Ar + bombardment on the characteristics of n-MOSFET have been investigated.A low energy (550eV) argon-ion-beam is applied to bombard the backside of n-MOSFET,thus the electrical characteristics of the thre- shold voltage, the transconductance,channel conductance and effective inversion layer carrier mobility of the devices can be improved.As the bombardment time increases,the threshold voltage decreases at first,and then increases;but the change tends of the transconductance,channel conductance and effective inversion layer carrier mobility are on the contrary.It is proved that the improvement of the parameters is due to the decrease of interface state density and fixed charge density.更多还原