【摘要】 研究了溅射 Ti/ Al/ Ti/ Au四层复合金属与 Al Ga N / Ga N的欧姆接触特性 ,并就环境温度对欧姆接触特性的影响进行了分析研究 .试验证实 :溅射的 Ti/ Al/ Ti/ Au与载流子浓度为 2 .2 4× 10 1 8cm- 3的 Al Ga N之间在室温下无需退火即可形成欧姆接触 .随快速退火温度的升高接触电阻降低 .快速退火时间 30 s已可实现该温度下最佳欧姆接触 .当工作温度不高于 30 0℃时接触电阻几乎不受温度的影响更多还原

【Abstract】 The performance of Ohmic contact between Ti/Al/Ti/Au deposited by sputtering and n-AlGaN with carrier density of 2 24×10 18 cm -3 has been studied.It is found that Ohmic contact can be formed between them without any annealing.As the RTA temperature is increasing,the contact resistivity would decrease.30 second is the optimum RTA time.The work temperature has hardly any influence on the contact resistivity when it is not higher than 300℃更多还原