【摘要】 采用 L P- MOVPE在 Si O2 掩膜的 In P衬底上实现了高质量的 In Ga As P多量子阱 (MQW)的选择区域生长(SAG) .通过改变生长温度和生长压力 ,MQW的适用范围由 C波段扩展至 L 波段 ,即 MQW的光致发光波长从15 46 nm延展至 16 2 1nm.光致发光 (PL)测试表明 :在宽达 75 nm的波长范围内 ,MQW的质量与非选择生长的MQW质量相当 ,并成功制作出电吸收调制 DFB激光器 (EML) .更多还原

【Abstract】 The high quality 755nm wide wavelength range InGaAsP MQW,which is grown on SiO₂ masked InP substrate by low-pressure metalorganic vapor phase epitaxy （LP-MOVPE）is reported.By changing the growth temperature and growth pressure,peaks of MQW PL spectra vary from 1546nm to 1621nm.MQWs grown at different temperatures have the similar PL intensity and FWHM.A single ridge waveguide electroabsorption modulated DFB laser （DFB EML） is also fabricated with high quality MQW materials.更多还原