【摘要】 采用 MOCVD技术以 Al2 O3为衬底在 Ga N膜上生长了 In Ga N薄膜 .以卢瑟福背散射 /沟道 (RBS/Channeling)技术和光致发光 (PL )技术对 Inx Ga1 - x N / Ga N / Al2 O3样品进行了测试 ,获得了合金层的组分、厚度、元素随深度分布、结晶品质及发光性能等信息 .研究表明生长温度和 TMIn/ TEGa比对 In Ga N薄膜的 In组分和生长速率影响很大 .在一定范围内 ,降低 TMIn/ TEGa比 ,In Ga N膜的生长速率增大 ,合金的 In组分反而提高 .降低生长温度 ,In Ga N膜的 In组分提高 ,但生长速率基本不变 . In Ga N薄膜的结晶品质随 In组分的增大而显著下降 ,In Ga N薄膜的 In组分由 0 .0 4增大到 0 .2 6 ,其最低沟道产额比由 4.1%增至 5 1.2 % . In Ga N薄膜中 In原子易处于替位位置 ,在所测试的 In组分范围 ,In原子的替位率均在 98%以上 .得到的质量良好的 In0 .0 4Ga0 .96 N薄膜的最低产额为 4.1% .研究结果还表明用 RBS技术和光致发光技术测定 In Ga N中 In组分的结果相差很大 ,In Ga N的PL谱要受较多因素影响 ,很难准确测定 In组分 ,而以 RBS技术得到的结果是可靠的 .更多还原

【Abstract】 The InGaN/GaN films have been grown on (0001) sapphire substrates by metalorganic chemical vapor deposition (MOCVD) under the atmospheric pressure.Properties of these films are investigated by making Rutherford backscattering/channeling measurements and photoluminescence at room temperature and 77K,respectively.The InN content and the growth rate of the InGaN films are found to be greatly influenced by the growth temperature and TMIn/TEGa ratio.The growth rate of InGaN films increases with the decrease of TMIn/TEGa ratio,but varies slightly with the reduction of growth temperature.InN content in InGaN films is enhanced with the growth temperature decreasing.However,it can also be promoted by decreasing the TMIn/TEGa ratio at the same growth temperature.Minimum surface yield χ_ min of InGaN films is ranging from 41% to 512%,when the InN percent is enhanced from 004 to 026.In atoms in the InGaN films are highly substituted,with the value of substitutionality over 98% in our measurement.The minimum surface yield χ_ min of In_ 004Ga_ 096N films is only 41%,which is grown at 760℃.There is great difference between the In percents in InGaN films obtained by Rutherford backscattering measurements and photoluminescence,respectively.The values obtained by Rutherford backscattering measurements are more reliable since many factors would influence the photoluminescence of InGaN films更多还原