【摘要】 提出并演示了一新型的低成本亚 5 0纳米多晶硅栅制作技术 .该技术的特点是它与光刻分辨率无关 ,即不需要高分辨率光刻技术 .纳米尺度的栅掩膜图案是由台阶侧壁图形的转移所形成 .实验结果表明 ,该技术制成的硅栅的栅长由形成侧壁图形的薄膜之厚度所决定 ,大致为该厚度的 75 %— 85 % .SEM照片显示硅栅的剖面为倒梯形结构 .与其它结构 (如矩形或正梯形 )相比 ,该结构有利于减少栅电阻 .更多还原

【Abstract】 A novel low-cost sub-50nm poly-Si gate patterning technology is proposed and experimentally demonstrated.The technology is resolution-independent,ie.,it does not contain any critical photolithographic steps.The nano-scale masking pattern for gate formation is formed according to the image transfer of an edge-defined spacer.Experimental results reveal that the resultant gate length,about 75 to 85 percent of the thickness,is determined by the thickness of the film to form the spacer.From SEM photograph,the cross-section of the poly-Si gate is seen to be an inverted-trapezoid,which is useful to reduce the gate resistance.更多还原