【摘要】 利用自动张量低能电子衍射 (ATL EED)定量地研究 Si(111) - (3× 3) R30°- Ga重构表面的原子结构 .证实了 Ga原子吸附在 T4位即第二层 Si原子所对的空位上 ,同时给出了表面最顶层 7个原子层的详细坐标 .可靠性因子 RVHT=0 .143表明理论计算和实验符合得非常好 .更多还原

【Abstract】 Refined atomic geometry of the Si(111)-(3×3)R30°-Ga surface has been obtained by the quantitative analysis of the intensity-energy spectra obtained from the measurement of a total of 16 symmetry-inequivalent beams by the method of low-energy electron diffraction in the energy range of 30—360eV.Ga atom is located on the hollow site above the second-layer Si atom,namely T 4 hollow site,but the distance between Ga adatom and the first Si layer is 0 144nm.Detailed atomic coordinates for atoms in the first 7 layers of the best-fit structure are given.A good level correspondence between the calculated intensities and the experimental ones has been reached with an average Van Hove-Tong R-factor of 0 143.更多还原