【摘要】 讨论了谐振腔中的 DBR对 In Ga As/ Ga As多量子阱 SEED面阵光反射特性的影响 .采用 In Ga As/ Ga As作为多量子阱 SEED器件的有源区 ,从而获得了 980 nm工作波长 .设计和分析了 In Ga As/ Ga As多量子阱 SEED中的一种用于倒装焊的新型谐振腔结构 .多量子阱材料是用 MOCVD系统生长 ,利用微区光反射谱、PL 谱以及 X射线双晶衍射对多量子阱材料进行了测量和分析 ,测量结果表明多量子阱材料具有良好的质量 ,证明了器件结构的设计和分析是准确的更多还原

【Abstract】 The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced. A new resonant cavity structure of the InGaAs/GaAs MQW SEED arrays has been designed and analyzed. The MQW materials grown by MOCVD system have also been measured and analyzed with micro optical spot reflection spectra, PL measurement and X ray measurement. The results of measurement prove the good quality of the wafer and the accuracy of our design and analysis of the structure of the device.更多还原