【摘要】 研究了 p型 Al/6H- Si C肖特基二极管的基本制作工艺及其电学参数。采用电流 -电压法 ( I-V)测试了肖特基二极管的理想因子 n和肖特基势垒高度b。对其基本电学参数 n和b 的温度特性进行了研究 ,并分析了串联电阻对 I- V特性的影响。更多还原

【Abstract】 The manufacturing process and electrical parameters of p-type 6H-SiC schottky diode are studied in the paper.The ideality factor n and barrier height φ b of the schottky diode are measured with method of current-voltage(I-V).We present temperature characteristics of the ideality factor n and barrier φ b and analyze the effects of the series resistance on characteristics of current-voltage(I-V)of the schottky diode.更多还原