【摘要】 用半导体统计方法导出准二维半导体自由载流子面密度的数学表达式 ,并给出面密度与体密度之间关系式。采用二维半导体自由载流子面密度表示式和范德堡 -霍尔实验测量在衬底 Ga As上 MBE生长的 Q2 D的样品 Ga Sb和 In As1-x Sbx ( x≈ 0 .2 2 )禁带宽度 Eg,获得满意结果。更多还原

【Abstract】 In this paper we propose the expression of the area densities in the quasi-2D semiconductor,the relationship between the area density,the bulk concentration and the experimental methods that are employed in the measurement of those physical quantities.We obtained satisfactory experimental results using the area density expression of the intrinsic carries in quasi-2D materials as GaSb and InAs 1-x Sb x(x≈0 22)grown by MBE technique.更多还原