【摘要】 分别采用离子注入隔离凹栅工艺、自隔离平面工艺、离子注入隔离平面工艺在非掺杂半绝缘 Ga As衬底上制备 MESFET,对三种工艺制备的 MESFET的阈值电压均匀性进行了研究。结果表明 ,器件工艺对 MESFET阈值电压有一定的影响 ,开展 Ga As MESFET阈值电压均匀性研究应采用适宜的工艺 ,以尽可能减少工艺引起的偏差。更多还原

【Abstract】 MESFET is fabricated on semi insulating GaAs substrate using ion implanted isolated recessed gate process,self isolated planar process and ion implanted isolated planar process.The threshold voltage uniformity are studied.The results show that device process has certain effects on the threshold voltage uniformity,proper process should be used in the research of the threshold voltage uniformity,in order to reduce the deviation.更多还原