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a—SiC/c—Si异质结太阳能电池中a—SiC:H薄膜的设计分析
Analysis of the design for a-SiC:H thin films in a-SiC/c-Si heterojunction solar cells
【摘要】 通过应用 Scharfetter-Gummel解法数值求解 Poisson方程,对热平衡 p+(a-SiC:H)/n(c-Si)异质结太阳能电池进行计算机数值模拟分析。给出了p+(a-SiC:H)膜厚及其p型掺杂浓度设计,还讨论了p+(a-siC:H)/n(c-Si)异质结太阳能电池稳定性。
【Abstract】 A computer simulation model of p+(a-SiC:H)/n(c-Si) heterojuncion solar cells at thermodynamic equilibrium using a Scharfetter-Gummel solution of Poisson’s equation has been developed. From results, the design of optimum thickness and p-type dopping concentration in the manufacture of p+(a-SiC:H)/n(c-Si) heterojuncion solar cells is analyzed. A design for the thick-ness and p-type dopping concentration of p+(a-SiC:H) thin films is preseated. Also, the stability of p+(a-SiC:H)/n(c-Si) heterojunction solar cells is discussed。
【关键词】 异质结太阳能电池;
Newton-Raphson解法;
a-SiC:H隙态密度分布;
载流子收集;
【Key words】 heterojunction solar cell; newton-raphson solution technique; density of states in a-SiC:H; carrier collection;
【Key words】 heterojunction solar cell; newton-raphson solution technique; density of states in a-SiC:H; carrier collection;
【基金】 国家自然科学基金(69876024)
- 【文献出处】 半导体技术 ,Semiconductor Technology , 编辑部邮箱 ,2001年12期
- 【分类号】TM914
- 【被引频次】1
- 【下载频次】247